The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Jan. 08, 2001
Applicant:
Inventor:
Yoshikazu Ohno, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A trench for element separation is formed in a silicon substrate by an etching process using an SiO film as a mask (FIG. B). Side walls are formed in a manner covering the trench laterally (FIG. C). Defect-forming ions such as silicon ions are implanted into the silicon substrate with the SiO film and side walls used as a mask, whereby a gettering layer is formed only at a bottom of the trench