The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Apr. 01, 2002
Applicant:
Inventors:
Seung Ki Joo, Seongnam-si, Kyunggi-do, KR;
Seok-Woon Lee, Incheon, KR;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
The invention provides a method for fabricating a TFT including a crystalline silicon active layer. The inventive method forms a metal offset region between the metal layer used to induce the cystallization of the active layer and the channel region of the TFT without introducing an additional process such as photoresist processing. Therefore, the inventive method improves the performance and manufacturing productivity of TFT and lower its production cost as well.
Joo, Seung. (2003). Method for fabricating thin film transistor including crystalline silicon active layer (U.S. Patent No. 6586287). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6586287
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile