The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Aug. 29, 2001
Akihiro Usujima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
For a semiconductor device including a gate electrode in an area of part of a surface of a semiconductor substrate, a gate length is determined and to be set as an upper-limit gate length. For a semiconductor device of which a gate length is almost equal to the upper-limit gate length, an impurity implantation condition is determined to calculate a representative impurity concentration distribution. A limit gate length is obtained according to the representative impurity concentration distribution. For a semiconductor device of which a gate length is equal to or greater than the limit gate length and equal to or less than the upper-limit gate length, an impurity concentration distribution of the semiconductor device is calculated according to the representative impurity concentration distribution. Characteristics of the semiconductor device are obtained according to the impurity concentration distribution. This method reduces the period of time to calculate the characteristics of the semiconductor device.