The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Nov. 29, 2000
Yong Hyun Lee, Taegu, KR;
Jung Hee Lee, Taegu, KR;
Suk Hun Lee, Taegu, KR;
Young Sik Choi, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an &agr;-Al O single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 &mgr;m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An &agr;-Al O single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 &mgr;m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.