The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Oct. 17, 2000
Tsutomu Ichihara, Hirakata, JP;
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Kyoto, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Takashi Hatai, Neyagawa, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
An electron source ( ) is provided with an n-type silicon substrate ( ) as a conductive substrate, a drift layer ( ) composed of oxidized porous polycrystalline silicon which is formed on the main surface of the silicon substrate ( ), and a surface electrode ( ) as a conductive thin film formed on the drift layer ( ). The process for, forming the surface electrode ( ) includes the steps of forming a first layer composed of Cr on the drift layer ( ), forming a second layer composed of Au on the first layer, and alloying the two layers. The surface electrode ( ) has higher adhesion for the drift layer and/or stability for the lapse of time. In addition, the surface electrode ( ) has lower density of states in an energy region near energy of emitted electrons, in comparison with the simple substance of Cr. In the surface electrode ( ), scattering of the electrons is less so that electron emitting efficiency is higher.