The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Nov. 06, 2001
Hirotsugu Honda, Kyoto, JP;
Masafumi Doi, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device providing an improved effect of suppressing variation with time of reverse breakdown voltage applied to PN junction, particularly, a voltage-regulator device, is provided. The semiconductor device includes an impurity diffusion layer formed on a surface of a certain-conductivity-type semiconductor substrate or well, the impurity diffusion layer having a conductivity opposite to that of the semiconductor substrate or well, and a device separating insulation film formed at a distance from the impurity diffusion layer, and a distance between an end of the impurity diffusion layer and an end of the device separating insulation film is defined to be not less than 1.2 &mgr;m.