The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Dec. 14, 1998
Prasad Alluri, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of forming a semiconductor device by placing a semiconductor substrate in a vacuum chamber and subjecting the semiconductor substrate ( ) to a sub-atmospheric pressure, and depositing a layer ( ) on the semiconductor substrate while maintaining the sub-atmospheric pressure. Deposition of the layer ( ) is carried out by sequentially (i) flowing a first reactant into the vacuum chamber at a first flow rate, (ii) reducing flow of the first reactant into the vacuum chamber to a second flow rate, and (iii) increasing flow of the first reactant into the vacuum chamber to a third flow rate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile