The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
May. 10, 2002
Applicant:
Inventor:
Taichi Hayamizu, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1302 ; H01L 2/1461 ;
Abstract
On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon film which is not covered with the resist pattern is removed. The surface of the polysilicon film left after the step of removing the exposed portion of the polysilicon film is thermally oxidized to form a gate electrode and an insulating film simultaneously on the surface of the gate electrode.
Hayamizu, Taichi. (2003). Method of manufacturing a semiconductor device (U.S. Patent No. 6583036). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6583036
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile