The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
May. 09, 2002
Applicant:
Inventor:
Chang-Rock Song, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti Hf N layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti Hf N layer; and forming a HfO layer on an interface between the electrode layer and the Ti Hf N layer by performing a thermal treatment in an oxygen gas-containing atmosphere.