The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Apr. 16, 2001
Toshinari Nitta, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Ions of arsenic are selectively implanted at a high concentration into a substrate through a first passivation film of silicon dioxide to obtain a shallow junction, thereby forming a source region with a low resistivity and a first drain region. Then, after the first passivation film is removed, a second passivation film of silicon dioxide is deposited over the substrate as well as over a stacked cell electrode by a CVD process performed at a relatively low temperature. Thereafter, the substrate is annealed in a nitrogen ambient at such a temperature as activating the dopant introduced. In this manner, the dopant in source region and first drain region is activated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile