The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jul. 18, 2001
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser device includes a semiconductor substrate, an active region formed on the semiconductor substrate and configured to radiate light having a predetermined wavelength range, and a wavelength selecting structure configured to select a first portion of the radiated light for emitting from the semiconductor laser device. An absorption region is located in a vicinity of the active region and configured to selectively absorb a second portion of the radiated light, and the first portion of the radiated light has a different wavelength than the second portion of the radiated light. The absorption region may be an integrated diffraction grating or a selective absorption region of the laser device. The semiconductor laser device may be used in an optical fiber amplifier such as a raman amplifier, a wavelength division multiplexing system, or a semiconductor laser module.