The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Mar. 23, 2000
Sanyo Electric Company, Ltd., Moriguchi, JP;
Abstract
In a semiconductor laser device, a buffer layer, an n-contact layer, an n-light cladding layer, an n-light guide layer, an emission layer, a p-cap layer, a p-light guide layer and an n-current blocking layer having a striped opening are successively formed on a sapphire substrate, and a p-light cladding layer is formed in the opening. A p-contact layer is formed on the p-light cladding layer and on the n-current blocking layer. The n-current blocking layer is made of n-Al Ga N and has an electron concentration of 1×10 cm and an Al composition greater than 0.1, and the surface thereof is terminated with N.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile