The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Feb. 21, 2002
Applicant:
Inventors:
Osamu Baba, Yamanashi, JP;
Yutaka Mimino, Yamanashi, JP;
Yoshio Aoki, Yamanashi, JP;
Muneharu Gotoh, Yamanashi, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/310 ; H01L 2/334 ;
U.S. Cl.
CPC ...
H01L 2/310 ; H01L 2/334 ;
Abstract
A high frequency semiconductor device includes semiconductor elements provided on a semiconductor substrate, a surface insulating layer for covering the semiconductor elements, at least one wiring layer which is provided above the surface insulating layer, with at least one insulating interlayer provided therebetween, and which combines with the ground potential to form transmission line, and at least one heat-radiating stud which is provided in at least one throughhole so as to penetrate said insulating interlayers and so as not to penetrate said surface insulating layer.