The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Feb. 16, 2000
Applicant:
Inventor:
Masakazu Muroyama, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/358 ; H01L 2/348 ;
Abstract
The semiconductor device comprising a lower conductive layer ( ) and an upper conductive layer ( ) which are formed via an interlayer insulator ( ) on a substrate ( ), wherein the interlayer insulator ( ) has a stack structure of an organic resin layer ( ) formed on the lower conductive layer ( ) and one or more high water-resistant insulating film ( ) having a specific Si content formed on the organic resin layer ( ). Even when the interlayer insulator realized by an organic resin insulating film of a low dielectric constant is used, characteristic and realizability is prevented from being deteriorated.