The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Dec. 13, 2001
Basil Lui, Cambridge, GB;
Piero Migliorato, Cambridge, GB;
Ichio Yudasaka, Suwa, JP;
Mitsutoshi Miyasaka, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile