The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Mar. 20, 2001
Derick J. Wristers, Bee Caves, TX (US);
Jon D. Cheek, Round Rock, TX (US);
John G. Pellerin, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is directed to a transistor having an enhanced width dimension and a method of making same. In one illustrative embodiment, the transistor comprises a semiconducting substrate, a recessed isolation structure formed in the substrate, the isolation structure defining a recess thereabove, a gate electrode and a gate insulation layer positioned above the substrate, a portion of the gate electrode and the gate insulation layer extending into the recess above the recessed isolation structure, and a source region and a drain region formed in the substrate. In another illustrative embodiment, the transistor comprises a semiconducting substrate, a recessed isolation structure that defines an active area having an upper surface and an exposed sidewall surface, a gate insulation layer and a gate electrode positioned above a portion of the upper surface and a portion of the exposed sidewall surface of the active area, and a source region and a drain region formed in the active area.