The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Sep. 17, 2001
Yoshiaki Hisamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A Zener diode is provided in a chip periphery portion which entirely surrounds at a periphery a unit cell portion and a gate pad portion along first to fourth directions. The Zener diode has an N -P-N -P-N structure consisting of an N type layer, a P type layer, an N type layer, a P type layer, and an N type layer, in which these layers extend along the first to fourth directions. With this structure, a power semiconductor device achieves a higher electrostatic strength by (1) a reduction in on-state resistance through enlargement of an effective cell region by downsizing the gate pad, and (2) an improvement in current-voltage characteristic of the Zener diode through an increase in PN junction width.