The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Feb. 03, 2000
Applicant:
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ;
Abstract
An insulated gate transistor comprising a first semiconductor region, a second semiconductor region includes plural portions, a third semiconductor region, a fourth semiconductor region, a first insulation layer, control electrodes, a first main electrode, and a second main electrode, wherein a metallic wiring layer is provided on the first main surface plane via an insulating layer, plural regions insulated from the first main electrode are provided through said first main electrode, and the metallic wiring layer is connected electrically to the control electrode through the insulating layer via the region insulated from the main electrode.