The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jun. 07, 2001
Yoshihiko Tani, Tenri, JP;
Shigeki Hayashida, Nara, JP;
Tatsuya Morioka, Ikoma, JP;
Seizo Kakimoto, Nara, JP;
Toshihiko Fukushima, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.