The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Feb. 05, 2002
Sung Yoon Cho, Seoul, KR;
Jae Heon Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for fabricating a semiconductor device capable of maintaining contact hole of fine size when the contact hole for bit line formation is defined. The method comprises the steps of: sequentially forming an insulating layer and an Anti-Reflective Coating layer on a substrate, the substrate including conductive regions; forming a photoresist pattern opening in the Anti-Reflective Coating layer over the conductive regions; removing the Anti-Reflective Coating layer in accordance with a first dry etch process using a mixed gas of SO and He and employing the photoresist pattern as an etch mask and at the same time, attaching polymers resulting from the dry etch process to the side of remaining Anti-Reflective Coating layer, thereby forming a polymer sidewall; removing the insulating layer in accordance with a second dry etch process employing the photoresist pattern and the polymer sidewall as an etch mask, thereby forming a contact hole; and removing the photoresist pattern, the remaining Anti-Reflective Coating layer and the polymer sidewall.