The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Sep. 24, 2001
Basab Chatterjee, Allen, TX (US);
Mona Eissa, Plano, TX (US);
Chad Kaneshige, McKinney, TX (US);
Vincent Korthuis, Plano, TX (US);
Barry Lanier, Allen, TX (US);
Satyavolu Papa Rao, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process for polishing a semiconductor wafer includes the steps of providing a plurality of wafers, forming a first layer, such as a barrier layer, over at least a portion of each wafer, and forming at least one layer including copper over at least a portion of each first layer. The process also includes the steps of providing a first polishing pad, providing a buffing pad, providing a plurality of operatively connected wafer carriers, and disposing a wafer within each of the wafer carriers. The process further includes the steps of disposing a first slurry composition on the first polishing pad and polishing a first wafer with the first polishing pad for a first length of time, in which the first polishing pad substantially removes the copper layer of the first wafer. The process also includes the steps of simultaneously buffing a second wafer with the buffing pad for a second length of time, in which the first length of time is greater than the second length of time, and rinsing the buffing pad and the buffed wafer with a moisture maintenance compound for at least a portion of the time between the completion of the second length of time and the first length of time. Moreover, the moisture maintenance compound substantially prevents drying of the buffed wafer between the completion of the second length of time and the first length of time.