The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jun. 25, 2001
Applicant:
Inventors:
Assignee:
Telefonaktiebolaget LM Ericsson (publ), Stockholm, SE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the high-frequency characteristics of the device is described. The method includes providing a semiconductor substrate ( ) with an n-doped collector layer ( ) surrounded by isolation areas ( ), implanting antimony ions into the collector layer such that a thin highly n-doped layer ( ) is formed in the uppermost portion of the collector layer, and forming a base on top of said thin highly n-doped layer ( ).