The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Sep. 07, 2000
Applicant:
Inventor:
John N. Ellis, Tavistock, GB;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/978 ;
U.S. Cl.
CPC ...
H01L 2/978 ;
Abstract
A method of fabricating a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device with an elevated source and drain . A MOSFET region is defined on the surface of a silicon substrate , and a central area of that region removed by etching down to a predefined depth. Raised areas on either side of the resulting recess are doped to form the drain and a source, such that an active channel of the MOSFET device is provided wholly beneath the base of the recess