The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jul. 20, 2001
Applicant:
Inventor:
Eiji Io, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/976 ;
Abstract
A tunnel oxide film a first polysilicon layer a poly—poly insulating film and a second polysilicon layer are formed on a semiconductor substrate in a memory cell area. After that, with two photo resists -S and -M as a mask, patterning is performed for the films, a layered product of the films formed according to the photo resist -S is taken as a gate electrode of a selection transistor S, and a layered product of the films formed according to the photo resist -M is taken as a gate electrode of a memory transistor M.