The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Jul. 17, 2000
Applicant:
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
MP Technologies, L.L.C., Wilmette, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01S 3/19 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01S 3/19 ;
Abstract
The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD<MBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.
Razeghi, Manijeh. (2003). Semiconductor laser diode (U.S. Patent No. 6577659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6577659
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile