The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2003

Filed:

Sep. 26, 2002
Applicant:
Inventors:

John E. Barth, Jr., Williston, VT (US);

Jeffrey H. Dreibelbis, Williston, VT (US);

Erik A. Nelson, Waterbury, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 ;
U.S. Cl.
CPC ...
G11C 7/02 ;
Abstract

A method and circuit for a self timed DRAM. The circuit includes interlock circuits coupled to an extension of the DRAM. The extension does not store “real” data but mimics the operations of the DRAM. The interlock circuits, in conjunction with the extension monitor and control read and write timings of the DRAM and self adjust these timings via feedback. To properly track DRAM cell timings, the interlock circuits and extension use the same cell design and load conditions as the DRAM. The method includes: activating a wordline and reference wordline, interlocking the sense amplifiers, column select and write back functions of the primary DRAM array by monitoring the identical reference cells and the state of the bitline in the extension DRAM array.


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