The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Mar. 23, 2001
Koji Sakui, Setagaya-ku, JP;
Toshiharu Watanabe, Herndon, VA (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A trench region is formed in a memory cell P-type well. Two NAND-type memory cell units are respectively formed along both side wall portions of this trench region. A floating gate and a control gate in these NAND-type memory cell units are formed self-aligningly without using a photoresist. One bit line connected to the two NAND-type memory cell units is formed via an interlayer dielectric. The bit line pitch of this bit line is set at 2 F. Hence, the size of a nonvolatile semiconductor memory can be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile