The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Oct. 19, 2001
Masaya Muranaka, Akishima, JP;
Yutaka Ito, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Memory cells are used which each have a MOSFET that holds an information voltage of three or more values at its gate, a writing transistor that supplies the information voltage of three or more values to the gate of the MOSFET, and a reading transistor connected in series with the MOSFET. A plurality of reference voltages corresponding to the information voltage of three or more values are applied from a source line to the sources of the MOSFETs, so that digital data is produced by a combination of on-state/off-state of the MOSFET and the plurality of reference voltages or that the source voltages themselves of the MOSFETs are produced as read voltages.