The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
May. 11, 2001
Applicant:
Inventors:
Akihisa Yoshida, Kyoto, JP;
Masatoshi Kitagawa, Hirakata, JP;
Masao Uchida, Ibaraki, JP;
Makoto Kitabatake, Nara, JP;
Tsuneo Mitsuyu, Hirakata, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1263 ; B23K 2/700 ;
U.S. Cl.
CPC ...
H01L 2/1263 ; B23K 2/700 ;
Abstract
An impurity doped SiC substrate and SiC thin film are irradiated with a laser light having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light may be within the range of 9.5 &mgr;m to 10 &mgr;m.