The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Dec. 28, 1999
Applicant:
Inventors:
Kiyoshi Oota, Neyagawa, JP;
Nobuhiko Hayashi, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka-Fu, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01L 2/348 ;
Abstract
An undoped GaN buffer layer, an n-type GaN layer and a p-type GaN layer are successively formed on a sapphire substrate, and a partial region from the p-type GaN layer to the n-type GaN layer is removed, to expose the n-type GaN layer. Ti films having a thickness of 3 to 100 Å and Pt films are successively formed on the p-type GaN layer and on the exposed upper surfaces of the n-type GaN layer. Consequently, a p electrode in ohmic contact with the p-type GaN layer and an n electrode in ohmic contact with the n-type GaN layer are formed without being alloyed by heat treatment.