The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Oct. 08, 1999
Katsumi Eikyu, Tokyo, JP;
Yukio Nishida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Arsenic is ion-implanted through a thin insulative through film formed on an active region in the vicinity of a gate insulating film towards the inside of a semiconductor substrate at a dose of 3E13 cm at an energy of 100 keV at a tilt angle, which is made by an ion implantation direction and a normal direction (NL), of 45 degrees with respect to a (100) surface of the semiconductor substrate, with which a channeling phenomenon can be caused. Next, phosphorus is ion-implanted towards the inside of the semiconductor substrate at a dose of 1E13 cm at an energy of 50 keV at an angle with which no channeling phenomenon can be caused. After that, a sidewall is formed and then arsenic is ion-implanted towards the inside of the semiconductor substrate at a dose of 4E15 cm at an energy of 50 keV at an angle with which no channeling phenomenon can be caused, to form n layers.