The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Feb. 02, 2001
Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor
Takatoshi Tsujimura, Fujisawa, JP;
Kohichi Miwa, Yokohama, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invention is directed to a thin film transistor includes: a gate electrode disposed above an insulating substrate and formed in a predetermined pattern; an a-Si film formed in accordance with the pattern of the gate electrode ; a source electrode formed via the a-Si film ; and a drain electrode disposed at a predetermined interval from the source electrode . The a-Si film includes a floating island region above which or beneath which the gate electrode is not disposed; and the source electrode and the drain electrode are configured in a manner that a channel length of an OFF-current in the floating island region , L , is longer than the channel length of an ON-current formed by the source electrode and the drain electrode located above or beneath the gate electrode , L .