The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Jul. 30, 2001
Applicant:
Inventors:
Masafumi Kimata, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method of manufacturing an infrared image sensor in which an etching gas is introduced through etching holes into a semiconductor substrate to form a hollow portion. The etching gas is introduced only through an etching hole in a splicing pillar when etching is started. This method provides an etching configuration which has a largest depth right beneath the splicing pillar and which becomes shallower toward ends of the substrate, and therefore there is no need for forming deep etching stoppers.