The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Nov. 30, 2001
Robert E. Jones, Austin, TX (US);
Bruce E. White, Round Rock, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A heteroepitaxial structure is made using nanocrystals that are formed closer together than normal lithography patterning would allow. The nanocrystals are oxidized and thus selectively etchable with respect to the substrate and surrounding material. In one case the oxidized nanocrystals are removed to expose the substrate at those locations and selective epitaxial germanium is then grown at those exposed substrate locations. The inevitable formation of the misfit dislocations does minimal harm because they are terminated at the surrounding material. In another case the surrounding material is removed and the germanium is epitaxially grown at the exposed substrate where the surrounding material is removed. The resulting misfit dislocations in the germanium terminate at the oxidized nanocrystals. By using nanocrystals that are able to be formed much closer together than is available for other features through lithography, the misfits are prevented from extending so far as to create harmful threading dislocations.