The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Mar. 06, 2002
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01K 2/18246 ;
U.S. Cl.
CPC ...
H01K 2/18246 ;
Abstract
Disclosed is a method of manufacturing a semiconductor device including a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions formed to be adjacent to the gate electrode; and an Al wiring formed through an interlayer insulating film covering the gate electrode, wherein impurity ions are implanted in a surface layer of the substrate using the Al wiring and a photoresist formed thereon as a mask, and wherein no photoresist is formed on the Al wiring arranged above regions in which the impurity ions are implanted in adjacent elements.