The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Aug. 04, 2000
Geoffrey John Davies, 2194 Randburg, ZA;
Raymond Albert Chapman, Mondeor, 2091, Johannesburg, ZA;
Aulette Stewart, Ruiterhof, 2194, Randburg, ZA;
Lesley Kay Hedges, Brackenhurst, 1448, ZA;
Moosa Mahomed Adia, Benoni, ZA;
Other;
Abstract
A method of making a bonded, coherent material comprising a mass of crystals, preferably diamond crystals, in a matrix is provided. The steps include providing a source of the crystals of the type to be grown and which are substantially free of macroscopically faceted surfaces, producing a reaction mass by bringing the source crystals into contact with a suitable solvent/catalyst, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth in the reaction zone of a high temperature/high pressure apparatus to produce the material and removing the material from the reaction zone, the conditions of crystal growth being chosen such that the source crystals are converted to crystals having developed macroscopic facets of low Miller index. Preferably the conditions of elevated temperature and pressure used are such that the Wulff effect dominates.