The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Mar. 15, 2002
Applicant:
Inventors:
Yuichi Einaga, Kawasaki, JP;
Kiyoshi Itano, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
A semiconductor memory comprises a p-type silicon substrate including a first diffused layer and a second diffused layer, and a gate insulation film in which carriers are trapped in different areas. A first voltage and a second voltage are applied to the p-type silicon substrate and the gate electrode, respectively, to allow tunnel current to flow between the p-type silicon substrate and the gate electrode so that the tunnel current may eliminate the carriers trapped in the gate insulation film. This allows all the electrons captured in the central portion of the channel area to disappear, resulting in more reliable data erasure.