The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Apr. 19, 2002
Applicant:
Inventor:
Katsuo Komatsuzaki, Ibaraki, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/122 ; G11C 7/00 ; G11C 7/02 ;
U.S. Cl.
CPC ...
G11C 1/122 ; G11C 7/00 ; G11C 7/02 ;
Abstract
A ferro-electric memory device system and method is described for accessing and sensing memory cells of an FeRAM memory array with an open bit line architecture. The memory device permits the sharing of certain memory circuits such as, a sense amplifier, a data buffer, and a dummy cell between several segments of an array of FeRAM memory cells associated with a pair of bitlines of the array. Various combinations of segmented bit lines and/or segmented word lines facilitate sharing the memory circuits of the device between the array segments or multiple arrays of memory cells.