The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Jan. 10, 2002
Dirk Killat, Kircheim, DE;
Dialog Semiconductor GmbH, Kirchheim/Teck-Nabern, DE;
Abstract
A new high voltage, high side driver circuit has been achieved. The circuit comprises, first, a top PFET having gate, drain, source, and bulk. The gate is coupled to a switching signal. The source is coupled to a high voltage. Second, a top resistor has first and second terminals. The first terminal is coupled to the high voltage. Third, a middle PFET cell comprises a middle PFET having gate, drain, source, and bulk. The source is coupled to the top PFET drain. The gate is coupled to the top resistor second terminal. A middle resistor has first and second terminals. The first terminal is coupled to the middle PFET gate. Finally, a middle means of claimping the middle PFET gate and a clamping voltage completes the middle PFET cell. Fourth, a bottom PFET cell comprises, first, a bottom PFET having gate, drain, source, and bulk. The gate is coupled to the middle resistor second terminal, the source is coupled to the middle PFET drain, and the drain forms a high side driver output. A bottom resistor is coupled between the bottom PFET gate and the high side driver output. Finally, a bottom means of clamping the bottom PFET gate and the clamping voltage completes the bottom cell. A low side driver is and a means of boosting the low side gate drive are disclosed. The means of clamping may be a diode or a bipolar transistor.