The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2003

Filed:

May. 29, 2001
Applicant:
Inventors:

Takashi Yamashita, Tokyo, JP;

Takeru Matsuoka, Tokyo, JP;

Shigeki Sunada, Hyogo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

There are described a semiconductor device having multilayer wiring and a method for manufacturing the semiconductor device, wherein an interconnection hole for interconnecting an upper wiring layer to a lower wiring layer is formed correctly, thereby improving the reliability of multilayer wiring. A lower silicon oxide film, an upper silicon oxide film, and a silicon nitride film to be interposed therebetween are formed on a spin-on-glass (SOG) film. Enlarged openings for interconnection holes are formed only within the upper silicon oxide film while the silicon nitride film is used as an etch stopper, thereby preventing extension of the enlarged openings to the SOG film.


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