The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
May. 26, 2000
Richard S. Burton, Newbury Park, CA (US);
Philip C. Canfield, Thousand Oaks, CA (US);
Skyworks Solutions, Inc., Irvine, CA (US);
Abstract
A method of manufacturing a semiconductor device having an improved ohmic contact system. The improved ohmic contact system comprises a thin reactive layer of platinum deposited on a portion of the base layer. The improved ohmic contact system further comprises a thick refractory layer of titanium or other suitable material deposited on the thin reactive layer. Both the reactive layer and the refractory layer are substantially free of gold. The improved ohmic contact system and method for forming the same eliminate base contact punchthrough on high performance semiconductor devices, such as heterojunction bipolar transistors, minimize raw material costs, and decrease manufacturing costs.