The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Feb. 07, 2001
Allan Richard Sugg, Langhorne, PA (US);
Michael John Lange, Yardley, PA (US);
Martin Harris Ettenberg, Princeton, NJ (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
In a semiconductor p-i-n photodiode an undoped absorption region ( ) is epitaxially grown between two highly doped regions ( ). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap ( ) doping (n˜2.5−6×10 /cm ), and nominally undoped (not intentionally doped, n˜1×10 −5×10 /cm ) InGaAs absorption regions ( ). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between n˜5×10 /cm and 1×10 /cm , in the InGaAs absorption region ( ) are significantly increased over that of a standard structure (non-intentionally doped).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile