The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Apr. 10, 2000
Applicant:
Inventor:
Mami Takeuchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 ; G03F 7/00 ;
U.S. Cl.
CPC ...
G03F 7/20 ; G03F 7/00 ;
Abstract
A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.
Quick Actions:
Takeuchi, Mami. (2003). Semiconductor device and method of forming the same as well as a photo-mask used therein (U.S. Patent No. 6573029). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6573029
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile