The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
May. 07, 2001
Applicant:
Inventor:
Tomoyuki Asada, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 ;
U.S. Cl.
CPC ...
H03F 3/04 ;
Abstract
A high-frequency power amplifier includes a semi-insulating GaAs substrate having disposed thereon an amplifying bipolar transistor, a bias circuit, a bias circuit output terminal connected to the bias circuit, and a base electrode connection terminal connected to the bipolar transistor; a chip inductor connected between the bias circuit output terminal and the base electrode connection terminal; and a mounting substrate on which both the semi-insulating GaAs substrate and the chip inductor are disposed, side by side.