The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Feb. 22, 2001
Curtis Chih-shan Ling, San Diego, CA (US);
Silicon Wave, Inc., San Diego, CA (US);
Abstract
A simple, scalable cross-degeneration circuit topology is described. The inventive cross-degeneration method and apparatus provides a circuit design having substantially improved linearity as compared to traditional circuit designs having similar power consumption. The improvement in linearity is achieved without unduly increasing circuit noise and without substantially reducing circuit bandwidth. Using the present inventive method and apparatus, a fixed circuit configuration can be used to accommodate a continuous range of specifications simply by varying component values, in contrast to the prior art requirements of providing additional devices or modifying device wiring. The inventive topology can be implemented using bipolar technologies and conventional MOS processes operating above threshold. Additionally, the inventive circuits can be implemented using other three-terminal (or multi-terminal) amplifying device technologies. A “common-mode” variant of the present inventive circuit topology is described. The common-mode variant greatly reduces noise contribution from circuit current sources.