The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2003

Filed:

Jan. 18, 2002
Applicant:
Inventors:

Toshiaki Kusunoki, Tokorozawa, JP;

Mutsumi Suzuki, Kodaira, JP;

Masakazu Sagawa, Inagi, JP;

Makoto Okai, Tokorozawa, JP;

Akitoshi Ishizaka, Chiba, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 ; C25D 5/02 ;
U.S. Cl.
CPC ...
H01J 1/62 ; C25D 5/02 ;
Abstract

A process for manufacturing a thin-film electron source including a lower electrode ( ), an upper electrode, and an insulating layer sandwiched between the lower electrode ( ) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode ( ) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode ( ) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer ( ) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.


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