The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Sep. 29, 2000
Paolo Rolandi, Voghera, IT;
SGS-Thomson Microelectronics S.R.L., Agrate Brianza, IT;
Abstract
A process for manufacturing an integrated circuit provides for the formation of a matrix of floating-gate non-volatile memory cells having dual polysilicon levels, with the two polysilicon levels being isolated by a gate dielectric layer ( ) and an interpoly dielectric layer ( ) therebetween, and for the concurrent formation of one type of thick-oxide transistor ( ) having an active area ( ) in regions peripheral to the matrix. The process of the invention provides for removal, during the step of defining the first-level polysilicon ( ), the polysilicon ( ) from the active area ( ) of the thick-oxide transistor ( ), so that the gate oxide of the transistor ( ) results from the superposition of the first ( ) and second ( ) dielectric layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile