The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jan. 08, 2002
Chul-Ho Shin, Kyunggi-do, KR;
Kyeong-Koo Chi, Seoul, KR;
Samsung Electronics Co., Ltd., Kyunggi-do, KR;
Abstract
A method of manufacturing a DRAM cell includes forming an isolation layer on a given region of a substrate to define an active region having a plurality of line shaped sub-regions; forming at least a pair of cell transistors in each line shaped sub-region, each cell transistor of a pair having a common drain region and respective source regions; forming a bit line pad on each common drain region and a storage node pad on each source region; forming a bit line pad protecting layer pattern having portions parallel to the word line, that covers the bit line pad; and forming storage nodes on storage node pads. The storage nodes of the DRAM cell contact with the storage node pads and are insulated electrically from the bit line pad by the bit line pad protecting layer pattern.