The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Jul. 10, 2000
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyristor device according to this invention, a self-extinguishing thyristor region is arranged on an inner region of the semiconductor substrate, a reverse conducting diode region whose outer periphery is completely enclosed with an isolation region is arranged on its outer region by at least one, and an external takeout gate electrode region is further arranged on the outermost peripheral region of the semiconductor substrate on the outer part thereof. Thus, a gate electrode provided on a surface of a gate part layer of the self-extinguishing thyristor region is connected with an external takeout gate electrode formed along the outermost periphery of the substrate through a gate wiring pattern formed on a surface of a connecting region.