The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2003

Filed:

Dec. 07, 1999
Applicant:
Inventors:

Yasumasa Kashima, Tokyo, JP;

Tsutomu Munakata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract

A semiconductor device includes a substrate formed of a group III element and a group V element, a buffer layer having a thickness of at least 0.5 &mgr;m covering an the entire main surface of the substrate, and a selective-area growth layer grown selectively on the buffer layer. The buffer layer includes both the group III element and the group V element. The buffer layer is formed by metalorganic vapor-phase epitaxy.


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